Apraksts

• Manufacturer: onsemi
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 65 A
• Rds On - Drain-Source Resistance: 16 mOhms
• Vgs - Gate-Source Voltage: - 25 V, + 25 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 65 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 150 W
• Channel Mode: Enhancement
• Tradename: QFET
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 105 ns
• Forward Transconductance - Min: 48 S
• Height: 16.3 mm
• Length: 10.67 mm
• Product Type: MOSFET
• Rise Time: 160 ns
• Series: FQP65N06

Parametri

60V
65A
150W
0R016
TO-220

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