Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 15A
• Power dissipation 52W
• Case IPAK
• Gate-source voltage ±20V
• On-state resistance 0.115Ω
• Mounting THT
• Gate charge 29.3nC
• Kind of channel enhancement
• Gross weight0.4 g

Parametri

100V
16A
79W
0R115
TO-251

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