Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 1.51A
• Power dissipation 20W
• Case TO220FP
• Gate-source voltage ±30V
• On-state resistance 3600mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Papildu informācijas
• Masa bruto: 1.69 g
• Oriģināls simbols: STP3NK60ZFP

Parametri

600V
2.4A
20W
3R3
TO-220F

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