Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-251-3
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 8.8 A
• Rds On - Drain-Source Resistance: 280 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 19 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 42 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single
• Fall Time: 29 ns
• Forward Transconductance - Min: 2.9 S
• Height: 6.22 mm
• Length: 6.73 mm
• Product Type: MOSFET
• Rise Time: 68 ns
• Series: IRFR/U
• 3000
• Subcategory: MOSFETs
• Transistor Type: 1 P-Channel
• Typical Turn-Off Delay Time: 15 ns
• Typical Turn-On Delay Time: 13 ns
• Width: 2.39 mm
• Unit Weight: 340 mg

Parametri

-60V
-8.8A
42W
0R28
TO-251

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