Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor P-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage -55V
• Drain current -12A
• Power dissipation 45W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 0.175Ω
• Mounting THT
• Gate charge 12.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.948 g
• Manufacturer part number: IRF9Z24NPBF

Parametri

-60V
-12A
45W
0R175
TO-220

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