Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor P-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage -100V
• Drain current -23A
• Power dissipation 140W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 0.117Ω
• Mounting THT
• Gate charge 64.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.955 g
• Manufacturer part number: IRF9540NPBF

Parametri

-100V
-23A
140W
0R2
TO-220

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