Apraksts

• Manufacturer: Vishay
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 60 V
• Id - Continuous Drain Current: 5.1 A
• Rds On - Drain-Source Resistance: 500 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 12 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 25 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Vishay Semiconductors
• Configuration: Single
• Fall Time: 31 ns
• Forward Transconductance - Min: 1.4 S
• Height: 2.38 mm
• Length: 6.73 mm
• Product Type: MOSFET
• Rise Time: 63 ns
• Series: IRFR/U

Parametri

-60V
-5.1A
25W
0R5
TO-252

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