Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOIC-8
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 30 V
• Id - Continuous Drain Current: 5.8 A
• Rds On - Drain-Source Resistance: 70 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 1 V
• Qg - Gate Charge: 59 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 2.5 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 47 ns
• Forward Transconductance - Min: 3.1 S
• Height: 1.75 mm
• Length: 4.9 mm
• Product Type: MOSFET
• Rise Time: 33 ns

Parametri

-30V
-5.8A
2.5W
0R045
SO8

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