Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOIC-8
• Transistor Polarity: P-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 40 V
• Id - Continuous Drain Current: 6.2 A
• Rds On - Drain-Source Resistance: 70 mOhms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Qg - Gate Charge: 53 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 2.5 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 100 ns
• Height: 1.75 mm
• Length: 4.9 mm
• Product Type: MOSFET
• Rise Time: 280 ns

Parametri

-40V
-6.2A
2.5W
0R041
SO8

Papildu dokumentācija