Apraksts

• Manufacturer: onsemi
• Product Category: Bipolar Transistors - BJT
• RoHS: Details
• Mounting Style: Through Hole
• Package/Case: TO-225-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 60 V
• Collector- Base Voltage VCBO: 80 V
• Emitter- Base Voltage VEBO: 7 V
• Collector-Emitter Saturation Voltage: 1.7 V
• Maximum DC Collector Current: 3 A
• Pd - Power Dissipation: 12.5 W
• Gain Bandwidth Product fT: 50 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Series: MJE181
• Packaging: Bulk
• Brand: onsemi
• Continuous Collector Current: 3 A
• DC Collector/Base Gain hFE Min: 50
• Height: 11.04 mm
• Length: 7.74 mm
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-126
80V
3A
NPN

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