Apraksts

• Manufacturer: Diodes Incorporated
• Product Category: Bipolar Transistors - BJT
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 450 V
• Emitter- Base Voltage VEBO: 6 V
• Maximum DC Collector Current: 6 A
• Pd - Power Dissipation: 100000 mW
• Gain Bandwidth Product fT: 14 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Technology: Si
• Brand: Diodes Incorporated
• DC Collector/Base Gain hFE Min: 5 at 3 A, 1 V
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-220
1000V
6A
NPN

Papildu dokumentācija