Apraksts

• Manufacturer: onsemi
• Product Category: Bipolar Transistors - BJT
• RoHS: N
• Mounting Style: Through Hole
• Package/Case: TO-204-2
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 90 V
• Collector- Base Voltage VCBO: 100 V
• Emitter- Base Voltage VEBO: 4 V
• Collector-Emitter Saturation Voltage: 800 mV
• Maximum DC Collector Current: 30 A
• Pd - Power Dissipation: 200 W
• Gain Bandwidth Product fT: 2 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Packaging: Tray
• Brand: onsemi
• Continuous Collector Current: 30 A
• DC Collector/Base Gain hFE Min: 25
• Height: 8.51 mm
• Length: 39.37 mm
• Product Type: BJTs - Bipolar Transistors
• 100
• Subcategory: Transistors
• Technology: Si
• Width: 26.67 mm
• Unit Weight: 1,600 g

Parametri

TO-3
100V
30A
NPN

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