BDV65C Tranzistors NPN-darl+diod, 120V, 12A, 125W => BDW83C, TO-3PN
BDV65C Tranzistors NPN-darl+diod, 120V, 12A, 125W => BDW83C, TO-3PN

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

BDV65C Tranzistors NPN-darl+diod, 120V, 12A, 125W => BDW83C, TO-3PN

Cena: 2.90 €
00015218
BDV65C
7
  • Apraksts

    • Manufacturer: onsemi
    • Product Category: Darlington Transistors
    • RoHS: Details
    • Configuration: Single
    • Transistor Polarity: NPN
    • Collector- Emitter Voltage VCEO Max: 120 V
    • Emitter- Base Voltage VEBO: 5 V
    • Collector- Base Voltage VCBO: 120 V
    • Maximum DC Collector Current: 10 A
    • Maximum Collector Cut-off Current: 400 uA
    • Mounting Style: Through Hole
    • Package/Case: TO-247
    • Minimum Operating Temperature: - 65 C
    • Maximum Operating Temperature: + 150 C
    • Series: BDV65B
    • Packaging: Tube
    • Brand: onsemi
    • DC Collector/Base Gain hFE Min: 1000
    • Height: 12.2 mm
    • Length: 15.2 mm
    • Product Type: Darlington Transistors

    Parametri

    TO-3PN
    120V
    12A
    NPN-darl+diod

    Papildu dokumentācija

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