Apraksts

• Manufacturer: onsemi
• Product Category: Bipolar Transistors - BJT
• RoHS: N
• Mounting Style: Through Hole
• Package/Case: TO-92-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 45 V
• Collector- Base Voltage VCBO: 50 V
• Emitter- Base Voltage VEBO: 6 V
• Collector-Emitter Saturation Voltage: 0.2 V
• Maximum DC Collector Current: 0.1 A
• Pd - Power Dissipation: 350 mW
• Gain Bandwidth Product fT: 100 MHz
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Packaging: Bulk
• DC Current Gain hFE Max: 460
• Height: 5.33 mm
• Length: 5.2 mm
• Technology: Si
• Width: 4.19 mm
• Brand: onsemi
• Continuous Collector Current: 0.1 A
• DC Collector/Base Gain hFE Min: 200
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-92
50V
0.1A
NPN

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