Apraksts

• Manufacturer: STMicroelectronics
• Product Category: Bipolar Transistors - BJT
• RoHS: Details
• Mounting Style: Through Hole
• Package/Case: TO-3P-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 140 V
• Collector- Base Voltage VCBO: 200 V
• Emitter- Base Voltage VEBO: 6 V
• Collector-Emitter Saturation Voltage: 700 mV
• Maximum DC Collector Current: 12 A
• Pd - Power Dissipation: 100 W
• Gain Bandwidth Product fT: 20 MHz
• Minimum Operating Temperature: -
• Maximum Operating Temperature: + 150 C
• Series: 2SD1047
• Packaging: Tube
• Brand: STMicroelectronics
• Continuous Collector Current: 12 A
• DC Collector/Base Gain hFE Min: 50
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-3P
160V
12A
NPN

Papildu dokumentācija