Apraksts

• Manufacturer: Diodes Incorporated
• Product Category: Bipolar Transistors - BJT
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 160 V
• Collector- Base Voltage VCBO: 180 V
• Emitter- Base Voltage VEBO: 6 V
• Maximum DC Collector Current: 0.6 A
• Pd - Power Dissipation: 300 mW
• Gain Bandwidth Product fT: 300 MHz
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: MMBT5551
• Packaging: Reel
• Height: 1 mm
• Length: 3.05 mm
• Technology: Si
• Width: 1.4 mm
• Brand: Diodes Incorporated
• Continuous Collector Current: 0.6 A
• DC Collector/Base Gain hFE Min: 80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
• Product Type: BJTs - Bipolar Transistors

Parametri

SOT23
160V
0.6A
Viens tranzistors
300MHz

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