Apraksts

• Manufacturer: onsemi
• Product Category: Bipolar Transistors - BJT
• RoHS: Details
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: NPN
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 100 V
• Collector- Base Voltage VCBO: 100 V
• Emitter- Base Voltage VEBO: 5 V
• Collector-Emitter Saturation Voltage: 1.2 V
• Maximum DC Collector Current: 3 A
• Pd - Power Dissipation: 15 W
• Gain Bandwidth Product fT: 3 MHz
• Minimum Operating Temperature: - 65 C
• Maximum Operating Temperature: + 150 C
• Series: MJD31C
• Packaging: Tube
• Height: 2.38 mm
• Length: 6.73 mm
• Technology: Si
• Width: 6.22 mm
• Brand: onsemi
• Continuous Collector Current: 3 A
• DC Collector/Base Gain hFE Min: 25
• Product Type: BJTs - Bipolar Transistors

Parametri

TO-252
100V
3A
Viens tranzistors
3MHz

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