Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 30A
• Pulsed drain current 160A
• Power dissipation 110W
• Case DPAK
• Gate-source voltage ±16V
• On-state resistance 27mΩ
• Mounting SMD
• Gate charge 48nC
• Kind of package reel
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Papildu informācijas
• Masa bruto: 0.392 g
• Oriģināls simbols: IRLR2905TRPBF

Parametri

55V
42A
110W
0R027
TO-252

Papildu dokumentācija