Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 30 V
• Id - Continuous Drain Current: 5 A
• Rds On - Drain-Source Resistance: 29 mOhms
• Vgs - Gate-Source Voltage: - 12 V, + 12 V
• Vgs th - Gate-Source Threshold Voltage: 800 mV
• Qg - Gate Charge: 6.8 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 1.3 W
• Channel Mode: Enhancement
• Tradename: HEXFET
• Series: N-Channel
• Packaging: Reel
• Packaging: Cut Tape
• Packaging: MouseReel
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 9.1 ns
• Forward Transconductance - Min: 19 S
• Height: 1.1 mm
• Length: 2.9 mm
• Product Type: MOSFET
• Rise Time: 5.6 ns
• 6000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 22 ns
• Typical Turn-On Delay Time: 4.2 ns
• Width: 1.3 mm
• Part # Aliases: IRLML6344TRPBF SP001574050
• Unit Weight: 8 mg

Parametri

30V
5A
1.3W
0R029
SOT23

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