Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 55 V
• Id - Continuous Drain Current: 104 A
• Rds On - Drain-Source Resistance: 8 mOhms
• Vgs - Gate-Source Voltage: - 16 V, + 16 V
• Qg - Gate Charge: 86.7 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Pd - Power Dissipation: 200 W
• Channel Mode: Enhancement
• Packaging: Tube
• Brand: Infineon / IR
• Configuration: Single
• Fall Time: 84 ns
• Height: 2.3 mm
• Length: 6.5 mm
• Product Type: MOSFET
• Rise Time: 160 ns
• 1000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: HEXFET Power MOSFET
• Typical Turn-Off Delay Time: 43 ns
• Typical Turn-On Delay Time: 12 ns
• Width: 6.22 mm
• Part # Aliases: SP001576524
• Unit Weight: 330 mg

Parametri

55V
104A
200W
0R008
D2PAK

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