Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 40V
• Drain current 120A
• Pulsed drain current 790A
• Power dissipation 230W
• Case D2PAK
• Gate-source voltage ±16V
• On-state resistance 3.1mΩ
• Mounting SMD
• Gate charge 75nC
• Kind of package reel
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.704 g
• Manufacturer part number: IRL1404ZSTRLPBF

Parametri

40V
120A
230W
0R0031
TO-263

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