Apraksts

• Manufacturer VISHAY
• Type of transistor N-MOSFET
• Technology TrenchFET®
• Polarisation unipolar
• Drain-source voltage 100V
• Drain current 60A
• Pulsed drain current 100A
• Power dissipation 150W
• Case D2PAK, TO263
• Gate-source voltage ±20V
• On-state resistance 41mΩ
• Mounting SMD
• Gate charge 0.1µC
• Kind of package reel, tape
• Kind of channel enhancement
• Gross weight1.712 g

Parametri

100V
TO-263
60A
150W
0R0165

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