Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 400V
• Drain current 1.9A
• Power dissipation 45W
• Case DPAK
• Gate-source voltage ±30V
• On-state resistance 1800mΩ
• Mounting SMD
• Kind of package reel,  tape
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Additional information
• Gross weight: 0.406 g
• Manufacturer part number: STD5NK40ZT4

Parametri

400V
3A
20W
1R8
TO-252

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