Apraksts

• Manufacturer: Taiwan Semiconductor
• Product Category: MOSFET
• Technology: Si
• Mounting Style: SMD/SMT
• Package/Case: TO-252-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 2 A
• Rds On - Drain-Source Resistance: 5 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 2 V
• Qg - Gate Charge: 13 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 70 W
• Channel Mode: Enhancement
• Brand: Taiwan Semiconductor
• Configuration: Single
• Fall Time: 24 ns
• Forward Transconductance - Min: 5 S
• Product Type: MOSFET
• Rise Time: 21 ns
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel

Parametri

600V
2A
54W
4R4
TO-252

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