Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 20V
• Drain current 6.3A
• Power dissipation 1.3W
• Case SOT23
• Gate-source voltage ±12V
• On-state resistance 21mΩ
• Mounting SMD
• Gate charge 8.9nC
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Papildu informācijas
• Masa bruto: 0.024 g
• Oriģināls simbols: IRLML6244TRPBF

Parametri

20V
6.3A
1.3W
0R021
SOT23

Papildu dokumentācija