BST82(02W) SMD Tranzistors N-FET, LogL(1...2V), 100V,  ±20V, 0,19A, 0.83W, 5R, SOT23
BST82(02W) SMD Tranzistors N-FET, LogL(1...2V), 100V,  ±20V, 0,19A, 0.83W, 5R, SOT23

* Produktu fotogrāfijas ir tikai noskatīšanai un var dažreiz atšķirties no priekšmeta reāla izskata. Bet galvenās īpašības ir vienādas.

BST82(02W) SMD Tranzistors N-FET, LogL(1...2V), 100V, ±20V, 0,19A, 0.83W, 5R, SOT23

Cena: 0.22 €
00023950
BST82
42
  • Apraksts

    • roduct Category Power MOSFET
    • Process Technology TMOS
    • Configuration Single
    • Channel Mode Enhancement
    • Channel Type N
    • Number of Elements per Chip 1
    • Maximum Drain Source Voltage (V) 100
    • Maximum Gate Source Voltage (V) ±20
    • Maximum Continuous Drain Current (A) 0.19
    • Maximum Drain Source Resistance (mOhm) 10000@5V
    • Typical Input Capacitance @ Vds (pF) 25@10V
    • Maximum Power Dissipation (mW) 830
    • Minimum Operating Temperature (°C) -65
    • Maximum Operating Temperature (°C) 150
    • Packaging Tape and Reel
    • Mounting Surface Mount
    • Package Height 1(Max)
    • Package Width 1.4(Max)
    • Package Length 3(Max)
    • PCB changed 3
    • Standard Package Name SOT
    • Supplier Package SOT-23
    • Pin Count 3
    • Lead Shape Gull-wing

    Parametri

    100V
    0.19A
    0.83W
    5R
    SOT23

    Papildu dokumentācija

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