Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-220-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 12 A
• Pd - Power Dissipation: 89 W
• Minimum Operating Temperature: - 55 C
• Packaging: Tube
• Brand: Infineon / IR
• Height: 8.77 mm
• Length: 10.54 mm
• Product Type: IGBT Transistors

Parametri

89W
TO-220
THT
6A
1200V
IGBT+d

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