Apraksts

• Manufacturer: Infineon
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 3.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 20 A
• Pd - Power Dissipation: 100 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: Infineon / IR
• Continuous Collector Current Ic Max: 20 A
• Height: 20.3 mm
• Length: 15.9 mm
• Product Type: IGBT Transistors

Parametri

100W
TO-247
THT
10A
1200V
Viens IGBT

Papildu dokumentācija