Apraksts

• Manufacturer: Toshiba
• Product Category: IGBT Transistors
• Technology: Si
• Package/Case: TO-3P(LH)-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1500 V
• Maximum Gate Emitter Voltage: 25 V
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: GT40T301
• Brand: Toshiba
• Continuous Collector Current Ic Max: 40 A
• Height: 26 mm
• Length: 20.5 mm
• Product Type: IGBT Transistors

Parametri

200W
2-21F1A
THT
40A
1500V
IGBT+d

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