Apraksts

• Manufacturer: Toshiba
• Product Category: IGBT Transistors
• Technology: Si
• Package/Case: TO-3P(N)IS-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Maximum Gate Emitter Voltage: 20 V
• Maximum Operating Temperature: + 150 C
• Series: GT30J322
• Brand: Toshiba
• Continuous Collector Current Ic Max: 30 A
• Height: 21 mm
• Length: 15.8 mm
• Product Type: IGBT Transistors

Parametri

75W
TO-247
THT
30A
600V
IGBT+d

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