Apraksts

• Manufacturer: IXYS
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-3P
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 330 V
• Collector-Emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 90 A
• Pd - Power Dissipation: 200 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Packaging: Tube
• Brand: IXYS
• Gate-Emitter Leakage Current: 200 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 30
• Subcategory: IGBTs
• Unit Weight: 5,500 g

Parametri

200W
TO-3P
THT
90A
330V
IGBT+d

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