Apraksts

• Manufacturer: onsemi
• Product Category: IGBT Transistors
• Technology: Si
• Package/Case: TO-3PN
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1300 V
• Collector-Emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 174 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: FGA30S120P
• Packaging: Tube
• Brand: onsemi / Fairchild
• Continuous Collector Current Ic Max: 60 A
• Gate-Emitter Leakage Current: 500 nA
• Product Type: IGBT Transistors

Parametri

348W
TO-3P
THT
30A
1300V
IGBT+d

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