Apraksts

• Manufacturer: onsemi
• Product Category: IGBT Transistors
• RoHS: Details
• Technology: Si
• Package/Case: TO-3P-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1200 V
• Collector-Emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 50 A
• Pd - Power Dissipation: 312 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Series: FGA25N120ANTD
• Packaging: Tube
• Continuous Collector Current Ic Max: 50 A
• Height: 18.9 mm
• Length: 15.8 mm
• Width: 5 mm
• Brand: onsemi / Fairchild
• Continuous Collector Current: 25 A
• Gate-Emitter Leakage Current: +/- 250 nA
• Product Type: IGBT Transistors

Parametri

312W
TO-3P
THT
25A
1200V
IGBT+d

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