Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor IGBT
• Technology TRENCHSTOP™
• Collector-emitter voltage 600V
• Collector current 4A
• Power dissipation 42W
• Case TO251
• Gate-emitter voltage ±20V
• Pulsed collector current 12A
• Mounting THT
• Gate charge 27nC
• Kind of package tube
• Turn-on time 21ns
• Turn-off time 207ns
• Semiconductor structure single transistor

Parametri

42W
TO-251
THT
4A
600V
Viens IGBT

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