Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 900V
• Drain current 1.89A
• Power dissipation 90W
• Case TO220-3
• Gate-source voltage ±30V
• On-state resistance 4800mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Papildu informācijas
• Masa bruto: 1.95 g
• Oriģināls simbols: STP3NK90Z

Parametri

900V
3A
90W
TO-220
4R1

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