Apraksts

• Manufacturer TEXAS INSTRUMENTS
• Type of transistor N-MOSFET
• Technology NexFET™
• Polarisation unipolar
• Drain-source voltage 80V
• Drain current 100A
• Power dissipation 217W
• Case TO220-3
• Gate-source voltage ±20V
• On-state resistance 5.5mΩ
• Mounting THT
• Gate charge 38nC
• Kind of package tube
• Heatsink thickness 1.14...1.4mm Additional information
• Gross weight: 2 g
• Manufacturer part number: CSD19501KCS

Parametri

80V
100A
217W
0R0055
TO-220

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