Apraksts

• Manufacturer STMicroelectronics
• Type of transistor N-MOSFET
• Technology SuperMesh™
• Polarisation unipolar
• Drain-source voltage 800V
• Drain current 1.89A
• Power dissipation 80W
• Case TO220-3
• Gate-source voltage ±30V
• On-state resistance 3500mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices ESD protected gate
• Papildu informācijas
• Masa bruto: 1.96 g
• Oriģināls simbols: STP4NK80Z

Parametri

800V
3.0A
80W
3R
TO-220

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