Apraksts

• Manufacturer: Infineon
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 800 V
• Id - Continuous Drain Current: 4 A
• Rds On - Drain-Source Resistance: 1.1 Ohms
• Vgs - Gate-Source Voltage: - 20 V, + 20 V
• Vgs th - Gate-Source Threshold Voltage: 2.1 V
• Qg - Gate Charge: 31 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 63 W
• Channel Mode: Enhancement
• Tradename: CoolMOS
• Packaging: Tube
• Brand: Infineon Technologies
• Configuration: Single
• Fall Time: 12 ns
• Height: 15.65 mm
• Length: 10 mm
• Product Type: MOSFET
• Rise Time: 15 ns
• Series: CoolMOS C3
• 500
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Typical Turn-Off Delay Time: 72 ns
• Typical Turn-On Delay Time: 25 ns
• Width: 4.4 mm
• Part # Aliases: SP000683152 SPP4N8C3XK SPP04N80C3XKSA1
• Unit Weight: 2 g

Parametri

800V
4A
63W
1R3
TO-220

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