Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 75V
• Drain current 209A
• Power dissipation 330W
• Case TO247AC
• Gate-source voltage ±20V
• On-state resistance 4.5mΩ
• Mounting THT
• Gate charge 410nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 5.5 g
• Manufacturer part number: IRFP2907PBF

Parametri

75V
209A
470W
0R045
TO-247

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