Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 75V
• Drain current 210A
• Power dissipation 370W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 3.3mΩ
• Mounting THT
• Gate charge 160nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.985 g
• Manufacturer part number: IRFB3077PBF

Parametri

75V
210A
370W
0R0028
TO-220

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