Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 75V
• Drain current 130A
• Power dissipation 330W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 7.8mΩ
• Mounting THT
• Gate charge 160nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.98 g
• Manufacturer part number: IRF1407PBF

Parametri

75V
130A
330W
0R0078
TO-220

Papildu dokumentācija