Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology CoolMOS™ CP
• Polarisation unipolar
• Drain-source voltage 600V
• Drain current 31A
• Power dissipation 255W
• Case PG-TO247-3
• Gate-source voltage ±20V
• On-state resistance 99mΩ
• Mounting THT
• Kind of package tube
• Kind of channel enhanced
• Papildu informācijas
• Masa bruto: 6.105 g
• Oriģināls simbols: IPW60R099CPFKSA1

Parametri

650V
31A
255W
0R099
TO-247

Papildu dokumentācija