Apraksts

• Manufacturer DIODES INCORPORATED
• Type of transistor N-MOSFET
• Polarisation unipolar
• Drain-source voltage 60V
• Drain current 90A
• Pulsed drain current 200A
• Power dissipation 100W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 6mΩ
• Mounting THT
• Gate charge 21nC
• Kind of package tube
• Kind of channel enhanced
• Gross weight1.87 g

Parametri

60V
130A
210W
0R006
TO-220

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