Apraksts

• Manufacturer: STMicroelectronics
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 6 A
• Rds On - Drain-Source Resistance: 1.2 Ohms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 4.5 V
• Qg - Gate Charge: 33 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 110 W
• Channel Mode: Enhancement
• Tradename: SuperMESH
• Series: STP6NK60Z
• Packaging: Tube
• Brand: STMicroelectronics
• Configuration: Single
• Fall Time: 19 ns
• Forward Transconductance - Min: 5 S
• Height: 9.15 mm
• Length: 10.4 mm
• Product Type: MOSFET
• Rise Time: 14 ns
• 1000
• Subcategory: MOSFETs
• Transistor Type: 1 N-Channel
• Type: MOSFET
• Typical Turn-Off Delay Time: 47 ns
• Typical Turn-On Delay Time: 14 ns
• Width: 4.6 mm
• Unit Weight: 2 g

Parametri

600V
6A
110W
1R
TO-220

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