Apraksts

• Manufacturer: onsemi
• Product Category: MOSFET
• RoHS: Details
• Technology: Si
• Mounting Style: Through Hole
• Package/Case: TO-220-3
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds - Drain-Source Breakdown Voltage: 600 V
• Id - Continuous Drain Current: 12 A
• Rds On - Drain-Source Resistance: 650 mOhms
• Vgs - Gate-Source Voltage: - 30 V, + 30 V
• Vgs th - Gate-Source Threshold Voltage: 4 V
• Qg - Gate Charge: 48 nC
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 150 C
• Pd - Power Dissipation: 225 W
• Channel Mode: Enhancement
• Series: FQP12N60C
• Packaging: Tube
• Brand: onsemi / Fairchild
• Configuration: Single
• Fall Time: 90 ns
• Forward Transconductance - Min: 13 S
• Height: 16.3 mm
• Length: 10.67 mm
• Product Type: MOSFET
• Rise Time: 85 ns

Parametri

600V
12A
225W
0R65
TO-220

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