Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 47A
• Power dissipation 110W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 22mΩ
• Mounting THT
• Gate charge 32nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.95 g
• Manufacturer part number: IRLZ44NPBF

Parametri

55V
47A
110W
0R022
TO-220

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