Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 27A
• Power dissipation 56W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 35mΩ
• Mounting THT
• Gate charge 16.7nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Additional information
• Gross weight: 1.96 g
• Manufacturer part number: IRLZ34NPBF

Parametri

55V
30A
68W
0R035
TO-220

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