Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 18A
• Power dissipation 45W
• Case TO220AB
• Gate-source voltage ±16V
• On-state resistance 60mΩ
• Mounting THT
• Gate charge 10nC
• Kind of package tube
• Kind of channel enhanced
• Features of semiconductor devices logic level
• Papildu informācijas
• Masa bruto: 1.96 g
• Oriģināls simbols: IRLZ24NPBF

Parametri

55V
18A
45W
TO-220
0R06

Papildu dokumentācija