Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 46A
• Power dissipation 88W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 16.5mΩ
• Mounting THT
• Gate charge 48nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.93 g
• Manufacturer part number: IRFZ46NPBF

Parametri

55V
53A
120W
0R0165
TO-220

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