Apraksts

• Manufacturer INFINEON TECHNOLOGIES
• Type of transistor N-MOSFET
• Technology HEXFET®
• Polarisation unipolar
• Drain-source voltage 55V
• Drain current 26A
• Power dissipation 56W
• Case TO220AB
• Gate-source voltage ±20V
• On-state resistance 40mΩ
• Mounting THT
• Gate charge 22.7nC
• Kind of package tube
• Kind of channel enhanced
• Additional information
• Gross weight: 1.975 g
• Manufacturer part number: IRFZ34NPBF

Parametri

55V
26A
88W
0R04
TO-220

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